Spin-dependent internal photo-electron emission over metal-semiconductor junctions: a study with circularly polarised infrared radiation

The spin asymmetry of internal photo-electron emission over Schottky barriers has been investigated for Fe/GaAs(001) having close-to-ideal current--voltage characteristics. Using a low-power circularly polarised YAG laser operated at its fundamental frequency (*l=1064 nm) as well as a visible diode...

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Veröffentlicht in:Applied physics. B, Lasers and optics Lasers and optics, 2002-05, Vol.74 (7-8), p.729-733
Hauptverfasser: MALINS, A. E. R, NEAL, J. R, SHEN, T.-H, LIANG, W. Y
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Sprache:eng
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Zusammenfassung:The spin asymmetry of internal photo-electron emission over Schottky barriers has been investigated for Fe/GaAs(001) having close-to-ideal current--voltage characteristics. Using a low-power circularly polarised YAG laser operated at its fundamental frequency (*l=1064 nm) as well as a visible diode laser (*l=670 nm) we demonstrate that, by eliminating the photo-current due to inter-band transitions in GaAs with the infrared source, a significant enhancement to the magnetic asymmetry could be achieved. The bias dependence of the asymmetry was also measured. It was found that the values were considerably different for the photo-electrons traversing the barriers in opposite directions.
ISSN:0946-2171
1432-0649
DOI:10.1007/s003400200856