The orientation-selective growth of LaNiO3 films on Si(100) by pulsed laser deposition using a MgO buffer

Highly (100)-oriented, (110)-oriented and polycrystalline LaNiO3 (LNO) films were successfully prepared on Si(100) using an oriented MgO film as a buffer. It was somewhat surprising to find that that the orientation relation between the LNO film and the corresponding MgO buffer was: LNO(100)\MgO(110...

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Veröffentlicht in:	Applied physics. A, Materials science & processing Materials science & processing, 2002-10, Vol.75 (4), p.545-549
Hauptverfasser:	Chen, X.Y., Wong, K.H., Mak, C.L., Liu, J.M., Yin, X.B., Wang, M., Liu, Z.G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Buffers Crystal structure Droplets Electrical resistivity Magnesium oxide Materials science Orientation Pulsed laser deposition
Online-Zugang:	Volltext
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