Photoluminescence from InAs quantum wells grown by liquid-phase epitaxy

InAs quantum wells have been grown using a novel rapid-slider liquid-phase epitaxial growth technique. Lattice-matched quantum wells down to 2.5 nm in thickness have been produced with InAs0.36Sb0.20P0.44barriers. Bright photoluminescence was observed from 33-nm InAs quantum wells consistent with em...

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Veröffentlicht in:	Applied physics. A, Materials science & processing Materials science & processing, 2000-09, Vol.71 (3), p.249-253
Hauptverfasser:	KRIER, A, KRIER, S. E, LABADI, Z
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Emission Epitaxial growth Epitaxy Exact sciences and technology Iii-v semiconductors Indium arsenides Materials science Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Photoluminescence Physics Quantum wells
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Beschreibung
Zusammenfassung:	InAs quantum wells have been grown using a novel rapid-slider liquid-phase epitaxial growth technique. Lattice-matched quantum wells down to 2.5 nm in thickness have been produced with InAs0.36Sb0.20P0.44barriers. Bright photoluminescence was observed from 33-nm InAs quantum wells consistent with emission from a type-II InAsSbP/InAs system.
ISSN:	0947-8396 1432-0630
DOI:	10.1007/s003390000457