Grain boundary diffusion of Cu in TiN film by X-ray photoelectron spectroscopy

In this study, the grain boundary diffusion of Cu through a TiN layer with columnar structure was investigated by X-ray photoelectron spectroscopy (XPS). It was observed that Cu atoms diffuse from the Cu layer to the surface along the grain boundaries in the TiN layer at elevated temperature. In ord...

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Veröffentlicht in:	Applied physics. A, Materials science & processing Materials science & processing, 2000-04, Vol.70 (4), p.431-434
Hauptverfasser:	LIM, K. Y, LEE, Y. S, CHUNG, Y. D, LYO, I. W, WHANG, C. N, WON, J. Y, KANG, H. J
Format:	Artikel
Sprache:	eng
Schlagworte:	BOUNDARIES COLUMNAR GRAINS Columnar structure Condensed matter: structure, mechanical and thermal properties Copper DIFFUSION Diffusion in solids Diffusion of impurities Exact sciences and technology GRAIN BOUNDARIES GRAIN BOUNDARY DIFFUSION Photoelectron spectroscopy PHOTOELECTRONS Physics Titanium nitride Transport properties of condensed matter (nonelectronic) X RAY SPECTROSCOPY X RAYS X-ray photoelectron spectroscopy
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Zusammenfassung:	In this study, the grain boundary diffusion of Cu through a TiN layer with columnar structure was investigated by X-ray photoelectron spectroscopy (XPS). It was observed that Cu atoms diffuse from the Cu layer to the surface along the grain boundaries in the TiN layer at elevated temperature. In order to estimate the grain boundary diffusion constants, we used the surface accumulation method. The diffusivity of Cu through TiN layer with columnar structure from 400 C to 650 C is Db#~6X10exp(-0.29/(kBT)) cm/s.
ISSN:	0947-8396 1432-0630
DOI:	10.1007/s003390051062