Improved ambient operation of n-channel organic transistors of solution-sheared naphthalene diimide under bias stress

Improved ambient operation of n-channel organic transistors of solution-sheared naphthalene diimide under bias stress

Large arrays of n-channel organic thin film transistors of a core-chlorinated naphthalene diimide were processed by solution shearing on a silicon dioxide dielectric exhibiting ambient stable electron mobilities of up to 0.95 cm(2) V(-1) s(-1). Under bias stress an increase in effective charge carri...

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Veröffentlicht in:Physical chemistry chemical physics : PCCP 2012-11, Vol.14 (41), p.14181-14185
Hauptverfasser: STOLTE, Matthias, GSANGER, Marcel, HOFMOCKEL, Robert, SURARU, Sabin-Lucian, WÜRTHNER, Frank
Format: Artikel
Sprache:eng
Schlagworte:
Arrays
Bias
Chemistry
Diimide
Electron mobility
Exact sciences and technology
General and physical chemistry
Naphthalene
Semiconductor devices
Stresses
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Zusammenfassung:Large arrays of n-channel organic thin film transistors of a core-chlorinated naphthalene diimide were processed by solution shearing on a silicon dioxide dielectric exhibiting ambient stable electron mobilities of up to 0.95 cm(2) V(-1) s(-1). Under bias stress an increase in effective charge carrier mobility of up to 4.26 cm(2) V(-1) s(-1) has been observed.
ISSN:1463-9076
1463-9084
DOI:10.1039/c2cp41552f