Low-temperature thermoluminescence in layered structured Ga0.75In0.25Se single crystals

► Thermoluminescence measurements have been carried out on Ga0.75In0.25Se crystals. ► Four defects centers located at 9, 45, 54 and 60meV have been found. ► Capture cross sections and attempt-to-escape frequencies of traps were calculated. ► Results of TL experiments were compared with those of TSC and PL. Defect centers in Ga0.75In0.25Se single crystals have been studied performing the thermoluminescence measurements in the temperature range of 10–300K. The observed glow curves were analyzed using curve fitting, initial rise, and different heating rate methods to determine the activation energies of the defect centers. Thermal cleaning process has been applied to decompose the overlapped curves. Four defect centers with activation energies of 9, 45, 54 and 60meV have been found as a result of the analysis. The capture cross sections and attempt-to-escape frequencies of the defect centers were also found using the curve fitting method under the light of theoretical predictions. The first order kinetics for the observed glow curve was revealed from the consistency between the theoretical predictions for slow retrapping and experimental results. Another indication of negligible retrapping was the independency of peak position from concentration of carriers trapped in defect levels.