Electrical characterization of rare-earth implanted GaN
Deep-level transient spectroscopy (DLTS) measurements were used to characterize the electrical properties of MOCVD grown, europium- (Eu) and xenon- (Xe) implanted GaN films on sapphire substrates. Implantation energy was 80 keV with a fluence of 1×10 14 cm −2 along a channeled crystallographic direc...
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| Veröffentlicht in: | Physica. B, Condensed matter Condensed matter, 2009-12, Vol.404 (22), p.4411-4414 |
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| container_title | Physica. B, Condensed matter |
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| creator | Janse van Rensburg, P.J. Auret, F.D. Matias, V.S. Vantomme, A. |
| description | Deep-level transient spectroscopy (DLTS) measurements were used to characterize the electrical properties of MOCVD grown, europium- (Eu) and xenon- (Xe) implanted GaN films on sapphire substrates. Implantation energy was 80
keV with a fluence of 1×10
14
cm
−2 along a channeled crystallographic direction. Defect levels were observed at
E
C
−0.19
eV for both Eu- and Xe-implantation which were predicted to be a rare-earth related donor level by theoretical calculations. Other defect levels are observed with energy levels located at 0.22, 0.68, 0.49, 0.60, 0.77
eV and 0.48, 0.64, 0.45, 0.72
eV below the conduction band for Eu and Xe implantation, respectively. Some of these levels have similar defect signatures and can be related to other implantation related defects introduced in erbium, praseodymium and helium implantations. |
| doi_str_mv | 10.1016/j.physb.2009.09.018 |
| format | Article |
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keV with a fluence of 1×10
14
cm
−2 along a channeled crystallographic direction. Defect levels were observed at
E
C
−0.19
eV for both Eu- and Xe-implantation which were predicted to be a rare-earth related donor level by theoretical calculations. Other defect levels are observed with energy levels located at 0.22, 0.68, 0.49, 0.60, 0.77
eV and 0.48, 0.64, 0.45, 0.72
eV below the conduction band for Eu and Xe implantation, respectively. Some of these levels have similar defect signatures and can be related to other implantation related defects introduced in erbium, praseodymium and helium implantations.</description><identifier>ISSN: 0921-4526</identifier><identifier>EISSN: 1873-2135</identifier><identifier>DOI: 10.1016/j.physb.2009.09.018</identifier><language>eng</language><publisher>Kidlington: Elsevier B.V</publisher><subject>Condensed matter ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Crystal defects ; Defects ; Electrical properties ; Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Energy levels ; Exact sciences and technology ; Gallium nitrides ; Gan ; Implantation ; Mathematical analysis ; Physics ; Rare earth metals ; Rare-earth ; Thin films and multilayers</subject><ispartof>Physica. B, Condensed matter, 2009-12, Vol.404 (22), p.4411-4414</ispartof><rights>2009 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c411t-d48379f9e04e3738e8893b443f8cc136745650a48a49a7bfd86e5ba3e3a5e5263</citedby><cites>FETCH-LOGICAL-c411t-d48379f9e04e3738e8893b443f8cc136745650a48a49a7bfd86e5ba3e3a5e5263</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.physb.2009.09.018$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,3550,23930,23931,25140,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=22280877$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Janse van Rensburg, P.J.</creatorcontrib><creatorcontrib>Auret, F.D.</creatorcontrib><creatorcontrib>Matias, V.S.</creatorcontrib><creatorcontrib>Vantomme, A.</creatorcontrib><title>Electrical characterization of rare-earth implanted GaN</title><title>Physica. B, Condensed matter</title><description>Deep-level transient spectroscopy (DLTS) measurements were used to characterize the electrical properties of MOCVD grown, europium- (Eu) and xenon- (Xe) implanted GaN films on sapphire substrates. Implantation energy was 80
keV with a fluence of 1×10
14
cm
−2 along a channeled crystallographic direction. Defect levels were observed at
E
C
−0.19
eV for both Eu- and Xe-implantation which were predicted to be a rare-earth related donor level by theoretical calculations. Other defect levels are observed with energy levels located at 0.22, 0.68, 0.49, 0.60, 0.77
eV and 0.48, 0.64, 0.45, 0.72
eV below the conduction band for Eu and Xe implantation, respectively. Some of these levels have similar defect signatures and can be related to other implantation related defects introduced in erbium, praseodymium and helium implantations.</description><subject>Condensed matter</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Crystal defects</subject><subject>Defects</subject><subject>Electrical properties</subject><subject>Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Energy levels</subject><subject>Exact sciences and technology</subject><subject>Gallium nitrides</subject><subject>Gan</subject><subject>Implantation</subject><subject>Mathematical analysis</subject><subject>Physics</subject><subject>Rare earth metals</subject><subject>Rare-earth</subject><subject>Thin films and multilayers</subject><issn>0921-4526</issn><issn>1873-2135</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp9kE1Lw0AQhhdRsH78Ai-5CF4S9yvZzcGDlFqFohc9L5PNhG5Jk7ibCvXXu7HFo8PAXN6Z952HkBtGM0ZZcb_JhvU-VBmntMymZvqEzJhWIuVM5KdkRkvOUpnz4pxchLChsZhiM6IWLdrROwttYtfgwY7o3TeMru-Svkk8eEwR_LhO3HZooRuxTpbwekXOGmgDXh_nJfl4WrzPn9PV2_Jl_rhKrWRsTGuphSqbEqlEoYRGrUtRSSkabS0ThZJ5kVOQGmQJqmpqXWBegUABOca04pLcHe4Ovv_cYRjN1gWLbUyC_S4YxotC5ZIWPErFQWp9H4LHxgzebcHvDaNmwmQ25heTmTCZqZmOW7dHAwgRQuOhsy78rXLONdVKRd3DQYfx2y-H3gTrsLNYOx8Jmrp3__r8AORGfZc</recordid><startdate>20091201</startdate><enddate>20091201</enddate><creator>Janse van Rensburg, P.J.</creator><creator>Auret, F.D.</creator><creator>Matias, V.S.</creator><creator>Vantomme, A.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20091201</creationdate><title>Electrical characterization of rare-earth implanted GaN</title><author>Janse van Rensburg, P.J. ; Auret, F.D. ; Matias, V.S. ; Vantomme, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c411t-d48379f9e04e3738e8893b443f8cc136745650a48a49a7bfd86e5ba3e3a5e5263</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Condensed matter</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Crystal defects</topic><topic>Defects</topic><topic>Electrical properties</topic><topic>Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Energy levels</topic><topic>Exact sciences and technology</topic><topic>Gallium nitrides</topic><topic>Gan</topic><topic>Implantation</topic><topic>Mathematical analysis</topic><topic>Physics</topic><topic>Rare earth metals</topic><topic>Rare-earth</topic><topic>Thin films and multilayers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Janse van Rensburg, P.J.</creatorcontrib><creatorcontrib>Auret, F.D.</creatorcontrib><creatorcontrib>Matias, V.S.</creatorcontrib><creatorcontrib>Vantomme, A.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica. B, Condensed matter</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Janse van Rensburg, P.J.</au><au>Auret, F.D.</au><au>Matias, V.S.</au><au>Vantomme, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical characterization of rare-earth implanted GaN</atitle><jtitle>Physica. B, Condensed matter</jtitle><date>2009-12-01</date><risdate>2009</risdate><volume>404</volume><issue>22</issue><spage>4411</spage><epage>4414</epage><pages>4411-4414</pages><issn>0921-4526</issn><eissn>1873-2135</eissn><abstract>Deep-level transient spectroscopy (DLTS) measurements were used to characterize the electrical properties of MOCVD grown, europium- (Eu) and xenon- (Xe) implanted GaN films on sapphire substrates. Implantation energy was 80
keV with a fluence of 1×10
14
cm
−2 along a channeled crystallographic direction. Defect levels were observed at
E
C
−0.19
eV for both Eu- and Xe-implantation which were predicted to be a rare-earth related donor level by theoretical calculations. Other defect levels are observed with energy levels located at 0.22, 0.68, 0.49, 0.60, 0.77
eV and 0.48, 0.64, 0.45, 0.72
eV below the conduction band for Eu and Xe implantation, respectively. Some of these levels have similar defect signatures and can be related to other implantation related defects introduced in erbium, praseodymium and helium implantations.</abstract><cop>Kidlington</cop><pub>Elsevier B.V</pub><doi>10.1016/j.physb.2009.09.018</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
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| ispartof | Physica. B, Condensed matter, 2009-12, Vol.404 (22), p.4411-4414 |
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| source | ScienceDirect |
| subjects | Condensed matter Condensed matter: electronic structure, electrical, magnetic, and optical properties Crystal defects Defects Electrical properties Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Energy levels Exact sciences and technology Gallium nitrides Gan Implantation Mathematical analysis Physics Rare earth metals Rare-earth Thin films and multilayers |
| title | Electrical characterization of rare-earth implanted GaN |
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