Electrical characterization of rare-earth implanted GaN

Deep-level transient spectroscopy (DLTS) measurements were used to characterize the electrical properties of MOCVD grown, europium- (Eu) and xenon- (Xe) implanted GaN films on sapphire substrates. Implantation energy was 80 keV with a fluence of 1×10 14 cm −2 along a channeled crystallographic direction. Defect levels were observed at E C −0.19 eV for both Eu- and Xe-implantation which were predicted to be a rare-earth related donor level by theoretical calculations. Other defect levels are observed with energy levels located at 0.22, 0.68, 0.49, 0.60, 0.77 eV and 0.48, 0.64, 0.45, 0.72 eV below the conduction band for Eu and Xe implantation, respectively. Some of these levels have similar defect signatures and can be related to other implantation related defects introduced in erbium, praseodymium and helium implantations.