Temperature dependency and carrier transport mechanisms of Ti/p-type InP Schottky rectifiers

We have investigated the temperature dependent current–voltage ( I– V) characteristics of Ti Schottky contacts to p-type InP. The Ti/p-type InP Schottky diode yielded an ideality factor of 1.08 showing good rectifying behavior with a barrier height of 0.73 eV at 300 K. The capacitance–voltage ( C– V) characteristics of the Ti Schottky contact to p-type InP have been measured at room temperature and at different frequencies. The barrier heights from C– V measurements are calculated to be 0.71, 0.72 and 0.77 eV at 10 kHz, 100 kHz and 1 MHz, respectively. The discrepancy of barrier heights obtained from I– V at 300 K and C– V characteristics measured at f = 1 MHz at 300 K is negligible due to homogenous nature of Schottky diode structures. The characteristic energy of the diode at 300 K showed thermionic emission to be the dominating current mechanism. The analysis of the reverse current–voltage characteristics of the Ti Schottky contact to p-type InP reveals that the main process involved in leakage current could be associated with the Frenkel–Poole emission at 300 K, while at 350 K and 400 K, the Schottky emission.