Indium Gallium Arsenide Quantum Dot Gate Field-Effect Transistor Using II–VI Tunnel Insulators Showing Three-State Behavior

This paper presents an indium gallium arsenide (InGaAs) quantum dot gate field-effect transistor (QDG-FET) that exhibits an intermediate “ i ” state in addition to the conventional ON and OFF states. The QDG-FET utilized a II–VI gate insulator stack consisting of lattice-matched ZnSe/ZnS/ZnMgS/ZnS/Z...

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Veröffentlicht in:	Journal of electronic materials 2012-10, Vol.41 (10), p.2810-2815
Hauptverfasser:	Chan, P.-Y., Suarez, E., Gogna, M., Miller, B.I., Heller, E.K., Ayers, J.E., Jain, F.C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Characterization and Evaluation of Materials Chemistry and Materials Science Cross-disciplinary physics: materials science rheology Devices Electronics Electronics and Microelectronics Exact sciences and technology Gates Indium aluminum arsenide Indium gallium arsenides Instrumentation Insulators Materials Science Methods of nanofabrication Molecular electronics, nanoelectronics Nanoscale materials and structures: fabrication and characterization Optical and Electronic Materials Physics Quantum dots Self-assembly Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors Solid State Physics Stacks Transistors
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Zusammenfassung:	This paper presents an indium gallium arsenide (InGaAs) quantum dot gate field-effect transistor (QDG-FET) that exhibits an intermediate “ i ” state in addition to the conventional ON and OFF states. The QDG-FET utilized a II–VI gate insulator stack consisting of lattice-matched ZnSe/ZnS/ZnMgS/ZnS/ZnSe for its high- κ and wide-bandgap properties. Germanium oxide (GeO x )-cladded germanium quantum dots were self-assembled over the gate insulator stack, and they allow for the three-state behavior of the device. Electrical characteristics of the fabricated device are also presented.
ISSN:	0361-5235 1543-186X
DOI:	10.1007/s11664-012-2176-5