Thermovoltaic processes in gallium arsenide doped with tin

Thermovoltaic processes in gallium arsenide doped with tin

In this study, we present the results of studies of n -GaAs〈Sn〉 with simple ohmic contacts in the temperature range of 30–200°C. It was found that, at temperature T > 30°C, this structure generates current (up to 0.018 μA) and voltage (up to 1.2 mV) and also has rectifying properties.

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Veröffentlicht in:Applied solar energy 2012-07, Vol.48 (3), p.165-168
Hauptverfasser: Leiderman, A. Yu, Saidov, A. S., Hashaev, M. M., Rakhmonov, U. Kh
Format: Artikel
Sprache:eng
Schlagworte:
Boundary conditions
Direct Conversion of Solar Energy to Electric Energy
Electrical Machines and Networks
Electrons
Engineering
Gallium
Gallium arsenide
Photovoltaic cells
Power Electronics
Semiconductors
Solar energy
Studies
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Zusammenfassung:In this study, we present the results of studies of n -GaAs〈Sn〉 with simple ohmic contacts in the temperature range of 30–200°C. It was found that, at temperature T > 30°C, this structure generates current (up to 0.018 μA) and voltage (up to 1.2 mV) and also has rectifying properties.
ISSN:0003-701X
1934-9424
DOI:10.3103/S0003701X12030085