Andreev reflection of helical edge modes in InAs/GaSb quantum spin Hall insulator
We present an experimental study of S-N-S junctions, with N being a quantum spin Hall insulator made of InAs/GaSb. A front gate is used to vary the Fermi level into the minigap, where helical edge modes exist [Phys. Rev. Lett. 107, 136603 (2011)]. In this regime we observe a ~2e(2)/h Andreev conduct...
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Veröffentlicht in: | Physical review letters 2012-11, Vol.109 (18), p.186603-186603, Article 186603 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We present an experimental study of S-N-S junctions, with N being a quantum spin Hall insulator made of InAs/GaSb. A front gate is used to vary the Fermi level into the minigap, where helical edge modes exist [Phys. Rev. Lett. 107, 136603 (2011)]. In this regime we observe a ~2e(2)/h Andreev conductance peak, consistent with a perfect Andreev reflection on the helical edge modes predicted by theories. The peak diminishes under a small applied magnetic field due to the breaking of time-reversal symmetry. This work thus demonstrates the helical property of the edge modes in a quantum spin Hall insulator. |
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ISSN: | 0031-9007 1079-7114 |
DOI: | 10.1103/PhysRevLett.109.186603 |