An InP/InGaAs metamorphic δ-doped heterojunction bipolar transistor with high current gain and low offset voltage

An InP/InGaAs metamorphic δ-doped heterojunction bipolar transistor with high current gain and low offset voltage

Excellent dc performance of an InP/InGaAs metamorphic δ-doped heterojunction bipolar transistor (HBT) using a linearly graded InxGa1−xP metamorphic buffer layer grown on GaAs substrate is demonstrated. The employment of a δ-doped sheet between two undoped spacer layers could eliminate the potential...

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Veröffentlicht in:Thin solid films 2012-10, Vol.521, p.172-175
Hauptverfasser: Tsai, Jung-Hui, Lour, Wen-Shiung, Chao, Yi-Ting, Ye, Sheng-Shiun, Ma, Yung-Chun, Jhou, Jia-Cing, Wu, You-Ren, Ou-Yang, Jhih-Jhong
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Cross-disciplinary physics: materials science
rheology
Current gain
Electric potential
Electronics
Exact sciences and technology
Gain
Heterojunction bipolar transistor
Heterojunction bipolar transistors
Indium gallium arsenides
Indium phosphides
InP/InGaAs
Materials science
Metamorphic
Offset voltage
Offsets
Other semiconductors
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Specific materials
Transistors
Voltage
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Zusammenfassung:Excellent dc performance of an InP/InGaAs metamorphic δ-doped heterojunction bipolar transistor (HBT) using a linearly graded InxGa1−xP metamorphic buffer layer grown on GaAs substrate is demonstrated. The employment of a δ-doped sheet between two undoped spacer layers could eliminate the potential spike at base–emitter junction and increase the effective barrier, which could prevent the hole injection from base into emitter. A maximum current gain of 255, a low offset voltage of 105mV, and a small second (third) harmonic distortions of 0.545 (−0.05) at VCE=2.5V are obtained. The current gain and offset voltage are the best values than that of the previous InP/InGaAs metamorphic HBT.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2011.12.081