Growth and surface characterization of magnetron sputtered zinc nitride thin films

Zinc nitride films were deposited on Si(100) substrates at room temperature using RF-magnetron sputtering in pure N2 and in Ar+N2 atmospheres. Two active phonon modes (270.81 and 569.80cm−1) are observed in Raman spectra for films deposited in Ar+N2 atmosphere. Atomic force microscopy showed that the average surface roughness of the films deposited in pure N2 atmosphere (1.3–3.33nm) was less than for those deposited in a mixed Ar+N2 atmosphere (10.3–12.8nm). Low temperature cathodoluminescence showed two emission bands centered at 2.05eV and 3.32eV for both types of films. ► Zn2N3 thin films were grown in pure N2 and in Ar–N2 mixture. ► Optical properties of Zn2N3 thin films were examined. ► Different preferred crystal orientations were observed for N2 and Ar+N2. ► Raman spectra show two active phonon modes for the Ar+N2 films. ► Low T cathodoluminescence shows two emission bands at 2.05eV and 3.32eV.