Fabrication of a transparent ultraviolet detector by using n-type Ga sub(2)O sub(3) and p-type Ga-doped SnO sub(2) core-shell nanowires

This study investigates the feasibility of synthesizing high-density transparent Ga sub(2)O sub(3)/SnO sub(2 ):Ga core-shell nanowires on a sapphire substrate at 1000 degree C by VLS. The doping Ga concentrations are 0.46, 1.07, 2.30 and 17.53 atomic%. The XRD spectrum and HR-TEM reveal Ga sub(2)O sub(3) and SnO sub(2) as having monoclinic and tetragonal rutile structures, respectively. Experimental results indicate that the XRD peak shift of SnO sub(2) to a larger angle increases with the increasing amount of Ga doping. According to the CL spectrum, SnO sub(2) and Ga sub(2)O sub(3) peak at approximately 528-568 nm and 422-424 nm, respectively. The maximum quantum efficiency of Ga sub(2)O sub(3)/SnO sub(2 ):Ga core-shell nanowires is around 0.362%. The UV light on-off current contrast ratio of Ga sub(2)O sub(3)/SnO sub(2 ):Ga core-shell nanowires is around 1066.7 at a bias of 5 V. Moreover, the dynamic response of Ga sub(2)O sub(3)/SnO sub(2 ):Ga core-shell nanowires has an on-off current contrast ratio of around 16. Furthermore, the Ga sub(2)O sub(3) region functions similar to a capacitor and continues to accumulate SnO sub(2):Ga excited electrons under UV light exposure.