Preparation of Ga2Se3 thin films by sol–gel technique

In this study we describe the preparation of Ga 2 Se 3 semiconductor compound thin films by sol–gel method for different crystal formation temperatures. The films were characterized by X-ray diffraction analyses (XRD), UV–visible spectrometer, and scanning electron microscope (SEM). The XRD spectrum...

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Veröffentlicht in:	Journal of sol-gel science and technology 2009-06, Vol.50 (3), p.271-274
Hauptverfasser:	Mutlu, Ibrahim H., Zarbaliyev, Maharram Z., Aslan, Ferhat
Format:	Artikel
Sprache:	eng
Schlagworte:	Absorption spectra Band spectra Beta phase Ceramics Chemistry Chemistry and Materials Science Colloidal gels. Colloidal sols Colloidal state and disperse state Composites Crystal structure Crystals Diffraction Electron microscopes Exact sciences and technology Gallium triselenide General and physical chemistry Glass Grain size Inorganic Chemistry Materials Science Nanotechnology Natural Materials Optical and Electronic Materials Original Paper Scanning electron microscopy Semiconductors Sol-gel processes Thin films X-ray diffraction
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