Preparation of Ga2Se3 thin films by sol–gel technique

In this study we describe the preparation of Ga 2 Se 3 semiconductor compound thin films by sol–gel method for different crystal formation temperatures. The films were characterized by X-ray diffraction analyses (XRD), UV–visible spectrometer, and scanning electron microscope (SEM). The XRD spectrum showed that the formation of Ga 2 Se 3 crystals were between 743 and 823 K. The thin film crystals that were formed at 773 K corresponded to the β phase and the preferred crystal structure was monoclinic. The value of band gap from optical absorption spectra for the Ga 2 Se 3 thin films was estimated to be about E g ~ 2.56 eV. The thickness of the one-coat Ga 2 Se 3 thin films, which was measured by a Spectroscopic Ellipsometer, was about ~200 nm. The average grain sizes of scattered particles were within the limits between 200 and 500 nm.