Design of strain compensated InGaAs/GaAsSb type-II quantum well structures for mid-infrared photodiodes
In this paper, the transition wavelength and wave function overlap of type-II In x Ga 1-x As/GaAs 1-y Sb y quantum wells are numerically calculated using a 4-band k · p Hamiltonian model. The simulation results indicate that absorption wavelength from 2 to 4 μ m can be achieved with a strain compen...
Gespeichert in:
| Veröffentlicht in: | Optical and quantum electronics 2012-06, Vol.44 (3-5), p.103-109 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 109 |
|---|---|
| container_issue | 3-5 |
| container_start_page | 103 |
| container_title | Optical and quantum electronics |
| container_volume | 44 |
| creator | Chen, Baile Jiang, W. Y. Holmes, A. L. |
| description | In this paper, the transition wavelength and wave function overlap of type-II In
x
Ga
1-x
As/GaAs
1-y
Sb
y
quantum wells are numerically calculated using a 4-band
k
·
p
Hamiltonian model. The simulation results indicate that absorption wavelength from 2 to 4
μ
m can be achieved with a strain compensated quantum well structure. The transition wavelength and wave function overlap can be optimized by properly selecting the thicknesses and composition of the quantum well layers. |
| doi_str_mv | 10.1007/s11082-011-9524-1 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1082223315</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1082223315</sourcerecordid><originalsourceid>FETCH-LOGICAL-c321t-7fcc4b6191132f1136b19a8aa92d17833cacdd6ebe0e0609b2e1927142d76f073</originalsourceid><addsrcrecordid>eNp9kD1PwzAQhi0EEqXwA9g8spj67HyOVYESqRIDILFZju2UVI2d2olQ_z2Owszy3vI-p7sHoXugj0BpvgoAtGCEApAyZQmBC7SANGekgPzrEi0opxkpSiiv0U0IB0pplqR0gfZPJrR7i12Dw-Bla7FyXW9skIPRuLJbuQ6rKd5rPJx7Q6oKn0Zph7HDP-Z4nKhRDaM3ATfO467VpLWNlz7i_bcbnG6dNuEWXTXyGMzd31yiz5fnj80r2b1tq816RxRnMJC8USqpMygBOGtiZDWUspCyZBrygnMlldaZqQ01NKNlzQyULIeE6TxraM6X6GHe23t3Gk0YRNcGFQ-V1rgxiMkSY5xDGqswV5V3IXjTiN63nfTnWBKTVDFLFVGqmKQKiAybmRC7dm-8OLjR2_jRP9AvnZJ6dQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1082223315</pqid></control><display><type>article</type><title>Design of strain compensated InGaAs/GaAsSb type-II quantum well structures for mid-infrared photodiodes</title><source>SpringerLink Journals - AutoHoldings</source><creator>Chen, Baile ; Jiang, W. Y. ; Holmes, A. L.</creator><creatorcontrib>Chen, Baile ; Jiang, W. Y. ; Holmes, A. L.</creatorcontrib><description>In this paper, the transition wavelength and wave function overlap of type-II In
x
Ga
1-x
As/GaAs
1-y
Sb
y
quantum wells are numerically calculated using a 4-band
k
·
p
Hamiltonian model. The simulation results indicate that absorption wavelength from 2 to 4
μ
m can be achieved with a strain compensated quantum well structure. The transition wavelength and wave function overlap can be optimized by properly selecting the thicknesses and composition of the quantum well layers.</description><identifier>ISSN: 0306-8919</identifier><identifier>EISSN: 1572-817X</identifier><identifier>DOI: 10.1007/s11082-011-9524-1</identifier><language>eng</language><publisher>Boston: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Computer Communication Networks ; Electrical Engineering ; Indium gallium arsenides ; Lasers ; Mathematical models ; Optical Devices ; Optics ; Photodiodes ; Photonics ; Physics ; Physics and Astronomy ; Quantum electronics ; Quantum wells ; Strain ; Wave functions ; Wavelengths</subject><ispartof>Optical and quantum electronics, 2012-06, Vol.44 (3-5), p.103-109</ispartof><rights>Springer Science+Business Media, LLC. 2011</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c321t-7fcc4b6191132f1136b19a8aa92d17833cacdd6ebe0e0609b2e1927142d76f073</citedby><cites>FETCH-LOGICAL-c321t-7fcc4b6191132f1136b19a8aa92d17833cacdd6ebe0e0609b2e1927142d76f073</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11082-011-9524-1$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11082-011-9524-1$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Chen, Baile</creatorcontrib><creatorcontrib>Jiang, W. Y.</creatorcontrib><creatorcontrib>Holmes, A. L.</creatorcontrib><title>Design of strain compensated InGaAs/GaAsSb type-II quantum well structures for mid-infrared photodiodes</title><title>Optical and quantum electronics</title><addtitle>Opt Quant Electron</addtitle><description>In this paper, the transition wavelength and wave function overlap of type-II In
x
Ga
1-x
As/GaAs
1-y
Sb
y
quantum wells are numerically calculated using a 4-band
k
·
p
Hamiltonian model. The simulation results indicate that absorption wavelength from 2 to 4
μ
m can be achieved with a strain compensated quantum well structure. The transition wavelength and wave function overlap can be optimized by properly selecting the thicknesses and composition of the quantum well layers.</description><subject>Characterization and Evaluation of Materials</subject><subject>Computer Communication Networks</subject><subject>Electrical Engineering</subject><subject>Indium gallium arsenides</subject><subject>Lasers</subject><subject>Mathematical models</subject><subject>Optical Devices</subject><subject>Optics</subject><subject>Photodiodes</subject><subject>Photonics</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Quantum electronics</subject><subject>Quantum wells</subject><subject>Strain</subject><subject>Wave functions</subject><subject>Wavelengths</subject><issn>0306-8919</issn><issn>1572-817X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNp9kD1PwzAQhi0EEqXwA9g8spj67HyOVYESqRIDILFZju2UVI2d2olQ_z2Owszy3vI-p7sHoXugj0BpvgoAtGCEApAyZQmBC7SANGekgPzrEi0opxkpSiiv0U0IB0pplqR0gfZPJrR7i12Dw-Bla7FyXW9skIPRuLJbuQ6rKd5rPJx7Q6oKn0Zph7HDP-Z4nKhRDaM3ATfO467VpLWNlz7i_bcbnG6dNuEWXTXyGMzd31yiz5fnj80r2b1tq816RxRnMJC8USqpMygBOGtiZDWUspCyZBrygnMlldaZqQ01NKNlzQyULIeE6TxraM6X6GHe23t3Gk0YRNcGFQ-V1rgxiMkSY5xDGqswV5V3IXjTiN63nfTnWBKTVDFLFVGqmKQKiAybmRC7dm-8OLjR2_jRP9AvnZJ6dQ</recordid><startdate>20120601</startdate><enddate>20120601</enddate><creator>Chen, Baile</creator><creator>Jiang, W. Y.</creator><creator>Holmes, A. L.</creator><general>Springer US</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20120601</creationdate><title>Design of strain compensated InGaAs/GaAsSb type-II quantum well structures for mid-infrared photodiodes</title><author>Chen, Baile ; Jiang, W. Y. ; Holmes, A. L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c321t-7fcc4b6191132f1136b19a8aa92d17833cacdd6ebe0e0609b2e1927142d76f073</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Computer Communication Networks</topic><topic>Electrical Engineering</topic><topic>Indium gallium arsenides</topic><topic>Lasers</topic><topic>Mathematical models</topic><topic>Optical Devices</topic><topic>Optics</topic><topic>Photodiodes</topic><topic>Photonics</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Quantum electronics</topic><topic>Quantum wells</topic><topic>Strain</topic><topic>Wave functions</topic><topic>Wavelengths</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, Baile</creatorcontrib><creatorcontrib>Jiang, W. Y.</creatorcontrib><creatorcontrib>Holmes, A. L.</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Optical and quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chen, Baile</au><au>Jiang, W. Y.</au><au>Holmes, A. L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Design of strain compensated InGaAs/GaAsSb type-II quantum well structures for mid-infrared photodiodes</atitle><jtitle>Optical and quantum electronics</jtitle><stitle>Opt Quant Electron</stitle><date>2012-06-01</date><risdate>2012</risdate><volume>44</volume><issue>3-5</issue><spage>103</spage><epage>109</epage><pages>103-109</pages><issn>0306-8919</issn><eissn>1572-817X</eissn><abstract>In this paper, the transition wavelength and wave function overlap of type-II In
x
Ga
1-x
As/GaAs
1-y
Sb
y
quantum wells are numerically calculated using a 4-band
k
·
p
Hamiltonian model. The simulation results indicate that absorption wavelength from 2 to 4
μ
m can be achieved with a strain compensated quantum well structure. The transition wavelength and wave function overlap can be optimized by properly selecting the thicknesses and composition of the quantum well layers.</abstract><cop>Boston</cop><pub>Springer US</pub><doi>10.1007/s11082-011-9524-1</doi><tpages>7</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0306-8919 |
| ispartof | Optical and quantum electronics, 2012-06, Vol.44 (3-5), p.103-109 |
| issn | 0306-8919 1572-817X |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1082223315 |
| source | SpringerLink Journals - AutoHoldings |
| subjects | Characterization and Evaluation of Materials Computer Communication Networks Electrical Engineering Indium gallium arsenides Lasers Mathematical models Optical Devices Optics Photodiodes Photonics Physics Physics and Astronomy Quantum electronics Quantum wells Strain Wave functions Wavelengths |
| title | Design of strain compensated InGaAs/GaAsSb type-II quantum well structures for mid-infrared photodiodes |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T12%3A04%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Design%20of%20strain%20compensated%20InGaAs/GaAsSb%20type-II%20quantum%20well%20structures%20for%20mid-infrared%20photodiodes&rft.jtitle=Optical%20and%20quantum%20electronics&rft.au=Chen,%20Baile&rft.date=2012-06-01&rft.volume=44&rft.issue=3-5&rft.spage=103&rft.epage=109&rft.pages=103-109&rft.issn=0306-8919&rft.eissn=1572-817X&rft_id=info:doi/10.1007/s11082-011-9524-1&rft_dat=%3Cproquest_cross%3E1082223315%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1082223315&rft_id=info:pmid/&rfr_iscdi=true |