Design of strain compensated InGaAs/GaAsSb type-II quantum well structures for mid-infrared photodiodes

Design of strain compensated InGaAs/GaAsSb type-II quantum well structures for mid-infrared photodiodes

In this paper, the transition wavelength and wave function overlap of type-II In x Ga 1-x As/GaAs 1-y Sb y quantum wells are numerically calculated using a 4-band k · p Hamiltonian model. The simulation results indicate that absorption wavelength from 2 to 4  μ m can be achieved with a strain compen...

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Veröffentlicht in:Optical and quantum electronics 2012-06, Vol.44 (3-5), p.103-109
Hauptverfasser: Chen, Baile, Jiang, W. Y., Holmes, A. L.
Format: Artikel
Sprache:eng
Schlagworte:
Characterization and Evaluation of Materials
Computer Communication Networks
Electrical Engineering
Indium gallium arsenides
Lasers
Mathematical models
Optical Devices
Optics
Photodiodes
Photonics
Physics
Physics and Astronomy
Quantum electronics
Quantum wells
Strain
Wave functions
Wavelengths
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Beschreibung
Zusammenfassung:In this paper, the transition wavelength and wave function overlap of type-II In x Ga 1-x As/GaAs 1-y Sb y quantum wells are numerically calculated using a 4-band k · p Hamiltonian model. The simulation results indicate that absorption wavelength from 2 to 4  μ m can be achieved with a strain compensated quantum well structure. The transition wavelength and wave function overlap can be optimized by properly selecting the thicknesses and composition of the quantum well layers.
ISSN:0306-8919
1572-817X
DOI:10.1007/s11082-011-9524-1