Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1−x)N layers as a function of InN content, layer thickness and growth parameters

Our study of samples grown in different metalorganic chemical vapor deposition reactors and with different growth conditions reveals that V-pits are always present in (InxAl1−x)N films whatever the layer thickness and the InN content. V-pits are empty inverted pyramids terminating threading dislocations. InN-rich triangular regions are present around the threading dislocations terminated by pits with a hexagonal 6-fold symmetry distribution in {11−20} planes. The nature of the facets of the V-pits depends on the growth conditions: pits with either {11−2l}, l being between 1 and 3, or {1−101} facets have been observed. Moreover, the nature of the threading dislocations terminated by pits also depends on the growth conditions. Our observations suggest that with a high V/III ratio only edge a+c-type dislocations are terminated by pits whereas with a low V/III ratio both edge a-type and mixed a+c-type dislocations are terminated by pits. ► MOCVD-grown AlInN films are studied by TEM. ► V-pits empty inverted pyramids terminate threading dislocations. ► In-rich triangular regions are present around dislocations. ► The facets of the V-pits depends off the growth conditions.