Impurity incorporation in orientation patterned GaAs grown by low pressure HVPE

Orientation-patterned GaAs (OP-GaAs) has shown promise as an efficient frequency-shifted laser source over the range of 2–12μm. In order to make OP-GaAs a viable source, efficiency and output power must be significantly increased, which requires minimizing major sources of loss. Low pressure HVPE has been adopted as the most suitable technique for regrowth of thick high quality GaAs layers on OP templates. We have explored process parameters in bulk and OP material to identify and control the sources of point defects, a key contributor to optical losses. Growth on OP templates with periodic [001] and [00−1] domains results in domain specific surface orientation, which should have inhomogeneous defect incorporation. Hall measurements, SIMS depth profiling, and cathodoluminescence (CL) were used to identify point defects in bulk and OP-GaAs. It was found that Si impurities are the primary source of donors, while VGa were identified as the primary source of acceptors. In order to study the incorporation of impurities in OP-GaAs samples, we intentionally doped samples with Si to increase CL and SIMS detectability. Spatially resolved CL and SIMS revealed regions with significant differences in the defect concentration, which can affect device output. ► Point defects were studied in orientation patterned GaAs grown by low pressure HVPE. ► Impurity and native defect incorporation are dependent on substrate temperature. ► Si doping to spatially resolve impurity incorporation in orientation patterned GaAs. ► Impurity incorporation is not uniform throughout the orientation pattern structure.