Influence of SHI irradiation on the structure and surface topography of CdTe thin films on flexible substrate

Issue Title: Special Issue: Photovoltaics, Solar Energy Materials & Thin Films - IMRC 2006, Cancun, Mexico Guest Editor Xavier Mathew Impact of ion irradiation on thin films is an emerging area for materials modification. CdTe thin films grown by thermal evaporation on flexible molybdenum (Mo) s...

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Veröffentlicht in:Journal of materials science. Materials in electronics 2007-11, Vol.18 (11), p.1093-1098
Hauptverfasser: CHANDRAMOHAN, S, SATHYAMOORTHY, R, SUDHAGAR, P, KANJILAL, D, KABIRAJ, D, ASOKAN, K, GANESAN, V
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Sprache:eng
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Zusammenfassung:Issue Title: Special Issue: Photovoltaics, Solar Energy Materials & Thin Films - IMRC 2006, Cancun, Mexico Guest Editor Xavier Mathew Impact of ion irradiation on thin films is an emerging area for materials modification. CdTe thin films grown by thermal evaporation on flexible molybdenum (Mo) substrate were irradiated with Swift (100 MeV) Ag^sup +7^ ions for various ion fluence in the range 10^sup 12^-10^sup 13^ ions/cm^sup 2^. The modifications in the composition, structure and surface morphology have been studied as a function of ion fluence. The Energy Dispersive X-ray Analysis (EDS) shows slightly Te-rich composition for both as-grown and irradiated films with no significant change after irradiation. X-ray diffraction (XRD) analysis indicates a consistent shift in the (111) peak position towards higher diffraction angle and an increase in the full width at half maximum (FWHM) with increase in ion fluence. The change in the residual stress during irradiation has been evaluated and is related to the corresponding microstructural changes in the films. The initial tensile stress is found to be relaxed after irradiation. Atomic Force Microscopy (AFM) studies revealed significant grain splitting after irradiation and formation of hillocks at higher ion fluence. The surface roughness was significantly increased at higher ion fluence.[PUBLICATION ABSTRACT]
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-007-9137-4