Effect of N sub(2) gas annealing and SiO sub(2) barrier on the optical transmittance and electrical resistivity of a transparent Sb-doped SnO sub(2) conducting film

During the fabrication process of transparent conducting thin films of ATO (antimony-doped tin oxide) on a soda lime glass substrate by a sol-gel dip coating method, the effects of the SiO sub(2) buffer layer formed on the substrate and N sub(2) annealing treatment were investigated quantitatively....

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Veröffentlicht in:	Journal of materials science 2005-02, Vol.16 (2), p.71-76
Hauptverfasser:	Lim, Tae-Young, Kim, Chang-Yeoul, Kim, Bum-Suk, Choi, Bong Geun, Shim, KwangBo
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Buffer layers Electrical resistivity Glass Reduction Silicon dioxide Thin films Tin oxides
Online-Zugang:	Volltext
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