Effect of N sub(2) gas annealing and SiO sub(2) barrier on the optical transmittance and electrical resistivity of a transparent Sb-doped SnO sub(2) conducting film
During the fabrication process of transparent conducting thin films of ATO (antimony-doped tin oxide) on a soda lime glass substrate by a sol-gel dip coating method, the effects of the SiO sub(2) buffer layer formed on the substrate and N sub(2) annealing treatment were investigated quantitatively....
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Veröffentlicht in: | Journal of materials science 2005-02, Vol.16 (2), p.71-76 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | During the fabrication process of transparent conducting thin films of ATO (antimony-doped tin oxide) on a soda lime glass substrate by a sol-gel dip coating method, the effects of the SiO sub(2) buffer layer formed on the substrate and N sub(2) annealing treatment were investigated quantitatively. The deposited ATO thin film was identified as a crystalline SnO sub(2) phase and the film thickness was about 100 nm/layer at a withdrawal speed of 50 mm/min. Optical transmittance and electrical resistivity of the 400 nm-thick ATO thin film that was deposited on SiO sub(2) buffer layer/soda lime glass and then annealed under nitrogen atmosphere were 84% and 5.0 x 10 super(-3); cm, respectively. The XPS analysis confirmed that a SiO sub(2) buffer layer inhibited Na ion diffusion from the substrate, preventing the formation of a secondary phase such as Na sub(2)SnO sub(3) and SnO and increasing Sb ion concentration and ratio of Sb super(5+)/Sb super(3+) in the film. It was found that N sub(2) annealing treatment leads to the reduction of Sn super(4+) as well as Sb super(5+), however the reduction of Sn super(4+) is more effective, and consequently results in a decrease in the electrical resistivity to produce excellent electrical properties in the film. [copy ] Springer Science + Business Media, Inc. |
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ISSN: | 0022-2461 1573-4803 |
DOI: | 10.1007/s10853-005-6453-z |