Single event transient pulse attenuation effect in three-transistor inverter chain

In this paper, compared with two-transistor （2T） inverter chain, the production and propagation of P-hit single event transient （SET） in three-transistor （3T） inverter chain is studied in depth based on three-dimensional numerical simulations in a 90 nm bulk complementary metal oxide semiconductor （...

Ausführliche Beschreibung