Blue shift in the optical band gap of amorphous HfaInaZnaO thin films deposited by RF sputtering
Amorphous HfaInaZnaO (a-HIZO) thin films were grown by radio frequency (RF) magnetron sputtering in a mixed atmosphere of Ar and O2 at fixed 5 mTorr working pressure. A 13% enhancement (blue shift) in band gap from 3.59 eV to 4.06 eV was obtained as O2/Ar flow ratio increased from 5% to 50%. a-HIZO...
Gespeichert in:
| Veröffentlicht in: | Journal of alloys and compounds 2012-06, Vol.525, p.172-174 |
|---|---|
| Hauptverfasser: | , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 174 |
|---|---|
| container_issue | |
| container_start_page | 172 |
| container_title | Journal of alloys and compounds |
| container_volume | 525 |
| creator | Thakur, Anup Kang, Se-Jun Baik, Jae Yoon Yoo, Hanbyeol Lee, Ik-Jae Lee, Han-Koo Jung, Seonghoon Park, Jaehun Shin, Hyun-Joon |
| description | Amorphous HfaInaZnaO (a-HIZO) thin films were grown by radio frequency (RF) magnetron sputtering in a mixed atmosphere of Ar and O2 at fixed 5 mTorr working pressure. A 13% enhancement (blue shift) in band gap from 3.59 eV to 4.06 eV was obtained as O2/Ar flow ratio increased from 5% to 50%. a-HIZO films deposited at higher O2/Ar gas flow ratio were more resistive. Oxygen-incorporation-induced reduction of oxygen vacancies is suggested to explain the band gap and resistivity increase. |
| doi_str_mv | 10.1016/j.jallcom.2012.02.091 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_1038265971</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1038265971</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_10382659713</originalsourceid><addsrcrecordid>eNqVjLtOw0AQRbcAifD4BKQpaWJmbCXYLYgoVEgRFU2Y2LPxWuvdxbMu-Htc8ANIR7rNuceYe8KCkLaPQzGw920cixKpLHChoQuzwqbcrOuqrq_MteqAiNRUtDJfz34W0N7ZDC5A7gViyq5lDycOHZw5QbTAY5xSH2eFveW3wJ-B3xd5eVjnR4VOUlSXpYPTDxx2oGnOWSYXzrfm0rJXufvbG_Owe_142a_TFL9n0XwcnbbiPQdZ-kfCqi63m-aJqn-ov-XTTyg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1038265971</pqid></control><display><type>article</type><title>Blue shift in the optical band gap of amorphous HfaInaZnaO thin films deposited by RF sputtering</title><source>Elsevier ScienceDirect Journals Complete</source><creator>Thakur, Anup ; Kang, Se-Jun ; Baik, Jae Yoon ; Yoo, Hanbyeol ; Lee, Ik-Jae ; Lee, Han-Koo ; Jung, Seonghoon ; Park, Jaehun ; Shin, Hyun-Joon</creator><creatorcontrib>Thakur, Anup ; Kang, Se-Jun ; Baik, Jae Yoon ; Yoo, Hanbyeol ; Lee, Ik-Jae ; Lee, Han-Koo ; Jung, Seonghoon ; Park, Jaehun ; Shin, Hyun-Joon</creatorcontrib><description>Amorphous HfaInaZnaO (a-HIZO) thin films were grown by radio frequency (RF) magnetron sputtering in a mixed atmosphere of Ar and O2 at fixed 5 mTorr working pressure. A 13% enhancement (blue shift) in band gap from 3.59 eV to 4.06 eV was obtained as O2/Ar flow ratio increased from 5% to 50%. a-HIZO films deposited at higher O2/Ar gas flow ratio were more resistive. Oxygen-incorporation-induced reduction of oxygen vacancies is suggested to explain the band gap and resistivity increase.</description><identifier>ISSN: 0925-8388</identifier><identifier>DOI: 10.1016/j.jallcom.2012.02.091</identifier><language>eng</language><subject>Alloys ; Barometric pressure ; Blue shift ; Deposition ; Electrical resistivity ; Radio frequencies ; Thin films ; Vacancies</subject><ispartof>Journal of alloys and compounds, 2012-06, Vol.525, p.172-174</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Thakur, Anup</creatorcontrib><creatorcontrib>Kang, Se-Jun</creatorcontrib><creatorcontrib>Baik, Jae Yoon</creatorcontrib><creatorcontrib>Yoo, Hanbyeol</creatorcontrib><creatorcontrib>Lee, Ik-Jae</creatorcontrib><creatorcontrib>Lee, Han-Koo</creatorcontrib><creatorcontrib>Jung, Seonghoon</creatorcontrib><creatorcontrib>Park, Jaehun</creatorcontrib><creatorcontrib>Shin, Hyun-Joon</creatorcontrib><title>Blue shift in the optical band gap of amorphous HfaInaZnaO thin films deposited by RF sputtering</title><title>Journal of alloys and compounds</title><description>Amorphous HfaInaZnaO (a-HIZO) thin films were grown by radio frequency (RF) magnetron sputtering in a mixed atmosphere of Ar and O2 at fixed 5 mTorr working pressure. A 13% enhancement (blue shift) in band gap from 3.59 eV to 4.06 eV was obtained as O2/Ar flow ratio increased from 5% to 50%. a-HIZO films deposited at higher O2/Ar gas flow ratio were more resistive. Oxygen-incorporation-induced reduction of oxygen vacancies is suggested to explain the band gap and resistivity increase.</description><subject>Alloys</subject><subject>Barometric pressure</subject><subject>Blue shift</subject><subject>Deposition</subject><subject>Electrical resistivity</subject><subject>Radio frequencies</subject><subject>Thin films</subject><subject>Vacancies</subject><issn>0925-8388</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqVjLtOw0AQRbcAifD4BKQpaWJmbCXYLYgoVEgRFU2Y2LPxWuvdxbMu-Htc8ANIR7rNuceYe8KCkLaPQzGw920cixKpLHChoQuzwqbcrOuqrq_MteqAiNRUtDJfz34W0N7ZDC5A7gViyq5lDycOHZw5QbTAY5xSH2eFveW3wJ-B3xd5eVjnR4VOUlSXpYPTDxx2oGnOWSYXzrfm0rJXufvbG_Owe_142a_TFL9n0XwcnbbiPQdZ-kfCqi63m-aJqn-ov-XTTyg</recordid><startdate>20120605</startdate><enddate>20120605</enddate><creator>Thakur, Anup</creator><creator>Kang, Se-Jun</creator><creator>Baik, Jae Yoon</creator><creator>Yoo, Hanbyeol</creator><creator>Lee, Ik-Jae</creator><creator>Lee, Han-Koo</creator><creator>Jung, Seonghoon</creator><creator>Park, Jaehun</creator><creator>Shin, Hyun-Joon</creator><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20120605</creationdate><title>Blue shift in the optical band gap of amorphous HfaInaZnaO thin films deposited by RF sputtering</title><author>Thakur, Anup ; Kang, Se-Jun ; Baik, Jae Yoon ; Yoo, Hanbyeol ; Lee, Ik-Jae ; Lee, Han-Koo ; Jung, Seonghoon ; Park, Jaehun ; Shin, Hyun-Joon</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_10382659713</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Alloys</topic><topic>Barometric pressure</topic><topic>Blue shift</topic><topic>Deposition</topic><topic>Electrical resistivity</topic><topic>Radio frequencies</topic><topic>Thin films</topic><topic>Vacancies</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Thakur, Anup</creatorcontrib><creatorcontrib>Kang, Se-Jun</creatorcontrib><creatorcontrib>Baik, Jae Yoon</creatorcontrib><creatorcontrib>Yoo, Hanbyeol</creatorcontrib><creatorcontrib>Lee, Ik-Jae</creatorcontrib><creatorcontrib>Lee, Han-Koo</creatorcontrib><creatorcontrib>Jung, Seonghoon</creatorcontrib><creatorcontrib>Park, Jaehun</creatorcontrib><creatorcontrib>Shin, Hyun-Joon</creatorcontrib><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of alloys and compounds</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Thakur, Anup</au><au>Kang, Se-Jun</au><au>Baik, Jae Yoon</au><au>Yoo, Hanbyeol</au><au>Lee, Ik-Jae</au><au>Lee, Han-Koo</au><au>Jung, Seonghoon</au><au>Park, Jaehun</au><au>Shin, Hyun-Joon</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Blue shift in the optical band gap of amorphous HfaInaZnaO thin films deposited by RF sputtering</atitle><jtitle>Journal of alloys and compounds</jtitle><date>2012-06-05</date><risdate>2012</risdate><volume>525</volume><spage>172</spage><epage>174</epage><pages>172-174</pages><issn>0925-8388</issn><abstract>Amorphous HfaInaZnaO (a-HIZO) thin films were grown by radio frequency (RF) magnetron sputtering in a mixed atmosphere of Ar and O2 at fixed 5 mTorr working pressure. A 13% enhancement (blue shift) in band gap from 3.59 eV to 4.06 eV was obtained as O2/Ar flow ratio increased from 5% to 50%. a-HIZO films deposited at higher O2/Ar gas flow ratio were more resistive. Oxygen-incorporation-induced reduction of oxygen vacancies is suggested to explain the band gap and resistivity increase.</abstract><doi>10.1016/j.jallcom.2012.02.091</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0925-8388 |
| ispartof | Journal of alloys and compounds, 2012-06, Vol.525, p.172-174 |
| issn | 0925-8388 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1038265971 |
| source | Elsevier ScienceDirect Journals Complete |
| subjects | Alloys Barometric pressure Blue shift Deposition Electrical resistivity Radio frequencies Thin films Vacancies |
| title | Blue shift in the optical band gap of amorphous HfaInaZnaO thin films deposited by RF sputtering |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-13T16%3A25%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Blue%20shift%20in%20the%20optical%20band%20gap%20of%20amorphous%20HfaInaZnaO%20thin%20films%20deposited%20by%20RF%20sputtering&rft.jtitle=Journal%20of%20alloys%20and%20compounds&rft.au=Thakur,%20Anup&rft.date=2012-06-05&rft.volume=525&rft.spage=172&rft.epage=174&rft.pages=172-174&rft.issn=0925-8388&rft_id=info:doi/10.1016/j.jallcom.2012.02.091&rft_dat=%3Cproquest%3E1038265971%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1038265971&rft_id=info:pmid/&rfr_iscdi=true |