Blue shift in the optical band gap of amorphous HfaInaZnaO thin films deposited by RF sputtering

Blue shift in the optical band gap of amorphous HfaInaZnaO thin films deposited by RF sputtering

Amorphous HfaInaZnaO (a-HIZO) thin films were grown by radio frequency (RF) magnetron sputtering in a mixed atmosphere of Ar and O2 at fixed 5 mTorr working pressure. A 13% enhancement (blue shift) in band gap from 3.59 eV to 4.06 eV was obtained as O2/Ar flow ratio increased from 5% to 50%. a-HIZO...

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Veröffentlicht in:Journal of alloys and compounds 2012-06, Vol.525, p.172-174
Hauptverfasser: Thakur, Anup, Kang, Se-Jun, Baik, Jae Yoon, Yoo, Hanbyeol, Lee, Ik-Jae, Lee, Han-Koo, Jung, Seonghoon, Park, Jaehun, Shin, Hyun-Joon
Format: Artikel
Sprache:eng
Schlagworte:
Alloys
Barometric pressure
Blue shift
Deposition
Electrical resistivity
Radio frequencies
Thin films
Vacancies
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Zusammenfassung:Amorphous HfaInaZnaO (a-HIZO) thin films were grown by radio frequency (RF) magnetron sputtering in a mixed atmosphere of Ar and O2 at fixed 5 mTorr working pressure. A 13% enhancement (blue shift) in band gap from 3.59 eV to 4.06 eV was obtained as O2/Ar flow ratio increased from 5% to 50%. a-HIZO films deposited at higher O2/Ar gas flow ratio were more resistive. Oxygen-incorporation-induced reduction of oxygen vacancies is suggested to explain the band gap and resistivity increase.
ISSN:0925-8388
DOI:10.1016/j.jallcom.2012.02.091