Preparation of freestanding AlN substrates by hydride vapor phase epitaxy using hybrid seed substrates
A novel hybrid seed substrate for preparing a freestanding (0001) AlN substrate was proposed. The seed substrate consists of thin single-crystalline AlN layer and thick poly-crystalline AlN base, which is expected to remove the differences of thermal expansion coefficient and lattice constant betwee...
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Veröffentlicht in: | Journal of crystal growth 2012-07, Vol.350 (1), p.75-79 |
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Hauptverfasser: | , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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