Preparation of freestanding AlN substrates by hydride vapor phase epitaxy using hybrid seed substrates

A novel hybrid seed substrate for preparing a freestanding (0001) AlN substrate was proposed. The seed substrate consists of thin single-crystalline AlN layer and thick poly-crystalline AlN base, which is expected to remove the differences of thermal expansion coefficient and lattice constant betwee...

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Veröffentlicht in:Journal of crystal growth 2012-07, Vol.350 (1), p.75-79
Hauptverfasser: Nagashima, Toru, Hakomori, Akira, Shimoda, Takafumi, Hironaka, Keiichiro, Kubota, Yuki, Kinoshita, Toru, Yamamoto, Reo, Takada, Kazuya, Kumagai, Yoshinao, Koukitu, Akinori, Yanagi, Hiroyuki
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Sprache:eng
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Zusammenfassung:A novel hybrid seed substrate for preparing a freestanding (0001) AlN substrate was proposed. The seed substrate consists of thin single-crystalline AlN layer and thick poly-crystalline AlN base, which is expected to remove the differences of thermal expansion coefficient and lattice constant between a subsequently grown thick AlN epitaxial layer and the seed substrate. A freestanding AlN substrate (diameter: 20mm; thickness: 180μm) was successfully prepared, although the freestanding AlN substrate included a number of inner cracks. The freestanding substrate had no strong specific absorption in the wavelength range 210–1000nm and showed an absorption number of 52cm−1 at 265nm.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2011.12.027