Defect annealing in Sb/Sn implanted diamond investigated with 119Sn Mössbauer spectroscopy
The annealing of defects in Sb/Sn implanted diamond has been studied in 119Sn Mössbauer spectroscopy following the implantation of radioactive parent isotopes 119Xe and 119mSn. Our results show that after annealing above 1300K, 40% of the implanted ions are located at or near regular sites in the la...
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| Veröffentlicht in: | Physica. B, Condensed matter Condensed matter, 2012-08, Vol.407 (15), p.2923-2925 |
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| container_title | Physica. B, Condensed matter |
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| creator | Bharuth-Ram, K. Gunnlaugsson, H.P. Masenda, H. Sielemann, R. Weyer, G. Köster, U. |
| description | The annealing of defects in Sb/Sn implanted diamond has been studied in 119Sn Mössbauer spectroscopy following the implantation of radioactive parent isotopes 119Xe and 119mSn. Our results show that after annealing above 1300K, 40% of the implanted ions are located at or near regular sites in the lattice. Significant implantation induced defects however remain. |
| doi_str_mv | 10.1016/j.physb.2011.08.041 |
| format | Article |
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Our results show that after annealing above 1300K, 40% of the implanted ions are located at or near regular sites in the lattice. Significant implantation induced defects however remain.</description><identifier>ISSN: 0921-4526</identifier><identifier>EISSN: 1873-2135</identifier><identifier>DOI: 10.1016/j.physb.2011.08.041</identifier><language>eng</language><publisher>Kidlington: Elsevier B.V</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Defect annealing ; Defects and impurities in crystals; microstructure ; Diamond ; Doping and impurity implantation in other materials ; Exact sciences and technology ; Magnetic resonances and relaxations in condensed matter, mössbauer effect ; Mössbauer effect; other γ-ray spectroscopy ; Mössbauer spectroscopy ; Physics ; Sb/Sn implantation ; Structure of solids and liquids; crystallography</subject><ispartof>Physica. 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B, Condensed matter</title><description>The annealing of defects in Sb/Sn implanted diamond has been studied in 119Sn Mössbauer spectroscopy following the implantation of radioactive parent isotopes 119Xe and 119mSn. Our results show that after annealing above 1300K, 40% of the implanted ions are located at or near regular sites in the lattice. Significant implantation induced defects however remain.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Defect annealing</subject><subject>Defects and impurities in crystals; microstructure</subject><subject>Diamond</subject><subject>Doping and impurity implantation in other materials</subject><subject>Exact sciences and technology</subject><subject>Magnetic resonances and relaxations in condensed matter, mössbauer effect</subject><subject>Mössbauer effect; other γ-ray spectroscopy</subject><subject>Mössbauer spectroscopy</subject><subject>Physics</subject><subject>Sb/Sn implantation</subject><subject>Structure of solids and liquids; crystallography</subject><issn>0921-4526</issn><issn>1873-2135</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNp9kL1OwzAQxy0EEuXjCViyILEk9TmpnQwMiG8JxABMDJZjn4ur1Al2C-qL8QK8GC5FjHix5Pvd3d8_Qo6AFkCBj2fF8LqKbcEoQEHrglawRUZQizJnUE62yYg2DPJqwvgu2YtxRtMBASPycoEW9SJT3qPqnJ9mzmeP7fjRZ24-dMov0GTGqXnvTSq9Y1y4qVo_frjFawbQJPL-6zPGVi0xZHFI00IfdT-sDsiOVV3Ew997nzxfXT6d3-R3D9e352d3uQYOTc7bylbCCg6sBk5LoWpjkZmqqmgzaQwCCsO4ACtaK4AjE0KjEsJoNArbcp-cbOYOoX9bpoRy7qLGLqXHfhkl0LJmlWBNk9Byg-qUMQa0cghursIqQXKtUs7kj0q5VilpLZPK1HX8u0BFrToblNcu_rUyTpuyZJPEnW44TL99dxhk1A59iulC0iJN7_7d8w1SqIvi</recordid><startdate>20120801</startdate><enddate>20120801</enddate><creator>Bharuth-Ram, K.</creator><creator>Gunnlaugsson, H.P.</creator><creator>Masenda, H.</creator><creator>Sielemann, R.</creator><creator>Weyer, G.</creator><creator>Köster, U.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QO</scope><scope>8FD</scope><scope>FR3</scope><scope>P64</scope></search><sort><creationdate>20120801</creationdate><title>Defect annealing in Sb/Sn implanted diamond investigated with 119Sn Mössbauer spectroscopy</title><author>Bharuth-Ram, K. ; Gunnlaugsson, H.P. ; Masenda, H. ; Sielemann, R. ; Weyer, G. ; Köster, U.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1619-6b4f47f7612816037a8dfe2d4440959de1e7d2671f7bf716e277cea77dcedaeb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Defect annealing</topic><topic>Defects and impurities in crystals; microstructure</topic><topic>Diamond</topic><topic>Doping and impurity implantation in other materials</topic><topic>Exact sciences and technology</topic><topic>Magnetic resonances and relaxations in condensed matter, mössbauer effect</topic><topic>Mössbauer effect; other γ-ray spectroscopy</topic><topic>Mössbauer spectroscopy</topic><topic>Physics</topic><topic>Sb/Sn implantation</topic><topic>Structure of solids and liquids; crystallography</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bharuth-Ram, K.</creatorcontrib><creatorcontrib>Gunnlaugsson, H.P.</creatorcontrib><creatorcontrib>Masenda, H.</creatorcontrib><creatorcontrib>Sielemann, R.</creatorcontrib><creatorcontrib>Weyer, G.</creatorcontrib><creatorcontrib>Köster, U.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Biotechnology Research Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Biotechnology and BioEngineering Abstracts</collection><jtitle>Physica. 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Our results show that after annealing above 1300K, 40% of the implanted ions are located at or near regular sites in the lattice. Significant implantation induced defects however remain.</abstract><cop>Kidlington</cop><pub>Elsevier B.V</pub><doi>10.1016/j.physb.2011.08.041</doi><tpages>3</tpages></addata></record> |
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| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Defect annealing Defects and impurities in crystals microstructure Diamond Doping and impurity implantation in other materials Exact sciences and technology Magnetic resonances and relaxations in condensed matter, mössbauer effect Mössbauer effect other γ-ray spectroscopy Mössbauer spectroscopy Physics Sb/Sn implantation Structure of solids and liquids crystallography |
| title | Defect annealing in Sb/Sn implanted diamond investigated with 119Sn Mössbauer spectroscopy |
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