Defect annealing in Sb/Sn implanted diamond investigated with 119Sn Mössbauer spectroscopy

The annealing of defects in Sb/Sn implanted diamond has been studied in 119Sn Mössbauer spectroscopy following the implantation of radioactive parent isotopes 119Xe and 119mSn. Our results show that after annealing above 1300K, 40% of the implanted ions are located at or near regular sites in the la...

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Veröffentlicht in:	Physica. B, Condensed matter Condensed matter, 2012-08, Vol.407 (15), p.2923-2925
Hauptverfasser:	Bharuth-Ram, K., Gunnlaugsson, H.P., Masenda, H., Sielemann, R., Weyer, G., Köster, U.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Defect annealing Defects and impurities in crystals microstructure Diamond Doping and impurity implantation in other materials Exact sciences and technology Magnetic resonances and relaxations in condensed matter, mössbauer effect Mössbauer effect other γ-ray spectroscopy Mössbauer spectroscopy Physics Sb/Sn implantation Structure of solids and liquids crystallography
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Zusammenfassung:	The annealing of defects in Sb/Sn implanted diamond has been studied in 119Sn Mössbauer spectroscopy following the implantation of radioactive parent isotopes 119Xe and 119mSn. Our results show that after annealing above 1300K, 40% of the implanted ions are located at or near regular sites in the lattice. Significant implantation induced defects however remain.
ISSN:	0921-4526 1873-2135
DOI:	10.1016/j.physb.2011.08.041