Excitation wavelength-dependent near-infrared luminescence from Bi-doped silica glass

[Display omitted] ► Bi-doped silica glass perform were prepared by MCVD. ► Tunable near-infrared luminescence from Bi-doped silica perform were reported. ► Tentative model was proposed and well explained complicated luminescence phenomenon. We report on excitation wavelength-dependent near-infrared luminescence from Bi-doped silica glass prepared by chemical vapor deposition technique. The peak position of the emission bands shows a complex change between 1120nm and 1270nm with increasing excitation wavelength from 280nm to 980nm. This behavior can be well explained by existence of two kinds of Bi active centers, Bi0 and Bi+, which contribute to the NIR emissions at 1120nm and 1267nm, respectively.