Study on Electronic State Analysis of SnO2 Transparent Electrode and on Making Low Resistance with First-Principles Calculation

Study on Electronic State Analysis of SnO2 Transparent Electrode and on Making Low Resistance with First-Principles Calculation

SnO2 has been promised as a substitutional transparent film for ITO. In order to decrease the resistance of sputtered SnO2 electrode, effect of crystallinity on carrier mobility was investigated for the sputtered SnO2 films. In this research, electronic structure (especially band structure and charg...

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Veröffentlicht in:Yōsetsu Gakkai ronbunshū 2012-01, Vol.30 (1), p.86-93
Hauptverfasser: YONETA, Kiyoto, SATOH, Ryohei, IWATA, Yoshiharu, MIYAGAWA, Haruhiko, ISONO, Takamitsu, OKAMOTO, Kazuya
Format: Artikel
Sprache:eng
Schlagworte:
Crystallinity
Doping
Electrodes
Indium tin oxide
Low resistance
Mathematical analysis
Tin dioxide
Tin oxides
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Zusammenfassung:SnO2 has been promised as a substitutional transparent film for ITO. In order to decrease the resistance of sputtered SnO2 electrode, effect of crystallinity on carrier mobility was investigated for the sputtered SnO2 films. In this research, electronic structure (especially band structure and charge density) of SnO2 with first-principles calculation on quantum theory was clarified. Thereby, the validity of doping and crystallinity in (110) to making low resistance was founded. Besides, application of the seed layer of CVD SnO2 thin film with high crystallinity lowered the resistance of SnO2 of sputtered film.
ISSN:0288-4771
DOI:10.2207/qjjws.30.86