Comprehensive electro-optical analysis of long wavelength GaInNAs edge-emitting laser diode

Comprehensive analysis of GaInNAs edge-emitting laser operating near 1300nm wavelength are made to underline the behavioural features of the proposed laser device, in view of the analytical investigation for various material and device electrical-optical parameters analysis such as band diagram, material gain, quantum well emission wavelength, optical wave and mode profiles, light-current-voltage characteristic, output mode spectrum, current distribution and far-field profile. The material analysis indicates that a high quality GaInNAs active region is designed, where high material gain and photoluminescence wavelength near 1.3μm are achieved. The device obtains low threshold current operation with lasing emission around 1.285μm.