Band offset of the In2S3/indium tin oxide interface measured by X-ray photoelectron spectroscopy

In2S3 thin films have been grown on Indium Tin Oxide (ITO) by Chemical Spray Pyrolysis. The structural and physical–chemical properties of the films have been investigated by means of X-ray Diffraction and X-ray Photoelectron spectroscopy (XPS). The valence band discontinuity at the In2S3/ITO interf...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Thin solid films 2012-07, Vol.520 (18), p.5856-5859
Hauptverfasser:	Menon, M.R. Rajesh, Mancini, A., Kartha, C. Sudha, Vijayakumar, K.P., Santoni, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Band offset Chemical spray pyrolysis Composition and phase identification Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Diffraction Discontinuity Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Indium sulfide Indium tin oxide Offsets Photoelectron spectroscopy Physics Surface and interface electron states Surface states, band structure, electron density of states Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Thin films X-ray diffraction X-ray photoelectron spectroscopy X-rays
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	In2S3 thin films have been grown on Indium Tin Oxide (ITO) by Chemical Spray Pyrolysis. The structural and physical–chemical properties of the films have been investigated by means of X-ray Diffraction and X-ray Photoelectron spectroscopy (XPS). The valence band discontinuity at the In2S3/ITO interface has been determined by XPS resulting in a value of 1.9±0.2eV. Consequently, the conduction band offset has been estimated to be 1.0±0.4eV. ► In2S3 thin films grown on indium tin oxide (ITO) coated substrates. ► In2S3 films prepared by chemical spray pyrolysis. ► Films show a tetragonal β‐In2S3 structure with substitutional ‘O’ in ‘S’ sites. ► The In2S3/ITO interface has been investigated by X-ray photoelectron spectroscopy. ► The valence and conduction band offsets were 1.9±0.2eV and 1.0±0.4eV, respectively.
ISSN:	0040-6090 1879-2731
DOI:	10.1016/j.tsf.2012.05.012