Improving the electrical performance of resistive switching memory using doping technology
In this paper, improvements of resistive random access memory （RRAM） using doping technology are summarized and analyzed. Based on a Cu/ZrO2/Pt device, three doping technologies with Ti ions, Cu, and Cu nanocrystal, respectively, are adopted in the experiments. Compared to an undoped device, improve...
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| Veröffentlicht in: | Chinese science bulletin 2012-04, Vol.57 (11), p.1235-1240 |
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| container_title | Chinese science bulletin |
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| creator | Wang, Yan Liu, Qi Lü, HangBing Long, ShiBing Wang, Wei Li, YingTao Zhang, Sen Lian, WenTai Yang, JianHong Liu, Ming |
| description | In this paper, improvements of resistive random access memory （RRAM） using doping technology are summarized and analyzed. Based on a Cu/ZrO2/Pt device, three doping technologies with Ti ions, Cu, and Cu nanocrystal, respectively, are adopted in the experiments. Compared to an undoped device, improvements focus on four points： eliminating the electroforming process, reduc- ing operation voltage, improving electrical uniformity, and increasing device yield. In addition, thermal stability of the high re- sistance state and better retention are also achieved by the doping technology. We demonstrate that doping technology is an effec- tive way of improving the electrical performance of RRAM. |
| doi_str_mv | 10.1007/s11434-011-4930-0 |
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Based on a Cu/ZrO2/Pt device, three doping technologies with Ti ions, Cu, and Cu nanocrystal, respectively, are adopted in the experiments. Compared to an undoped device, improvements focus on four points： eliminating the electroforming process, reduc- ing operation voltage, improving electrical uniformity, and increasing device yield. In addition, thermal stability of the high re- sistance state and better retention are also achieved by the doping technology. We demonstrate that doping technology is an effec- tive way of improving the electrical performance of RRAM.</description><identifier>ISSN: 1001-6538</identifier><identifier>EISSN: 1861-9541</identifier><identifier>DOI: 10.1007/s11434-011-4930-0</identifier><language>eng</language><publisher>Heidelberg: Springer-Verlag</publisher><subject>Chemistry/Food Science ; Copper ; Devices ; Doping ; Earth Sciences ; Electroforming ; Engineering ; Humanities and Social Sciences ; ions ; Life Sciences ; multidisciplinary ; Nanocrystals ; Performance enhancement ; Physics ; Review ; Science ; Science (multidisciplinary) ; thermal stability ; Variability ; Voltage ; 兴奋剂 ; 掺杂技术 ; 电气性能 ; 电铸工艺 ; 电阻式 ; 纳米晶体 ; 记忆体 ; 随机存取存储器</subject><ispartof>Chinese science bulletin, 2012-04, Vol.57 (11), p.1235-1240</ispartof><rights>The Author(s) 2012. This article is distributed under the terms of the Creative Commons Attribution License which permits any use, distribution and reproduction in any medium, provided the original author(s) and source are credited.</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c414t-22679cec2ddda0ecd57984bcbb155fdf3deb7933845be7ee16053e88a02a5ab03</citedby><cites>FETCH-LOGICAL-c414t-22679cec2ddda0ecd57984bcbb155fdf3deb7933845be7ee16053e88a02a5ab03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/86894X/86894X.jpg</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Wang, Yan</creatorcontrib><creatorcontrib>Liu, Qi</creatorcontrib><creatorcontrib>Lü, HangBing</creatorcontrib><creatorcontrib>Long, ShiBing</creatorcontrib><creatorcontrib>Wang, Wei</creatorcontrib><creatorcontrib>Li, YingTao</creatorcontrib><creatorcontrib>Zhang, Sen</creatorcontrib><creatorcontrib>Lian, WenTai</creatorcontrib><creatorcontrib>Yang, JianHong</creatorcontrib><creatorcontrib>Liu, Ming</creatorcontrib><title>Improving the electrical performance of resistive switching memory using doping technology</title><title>Chinese science bulletin</title><addtitle>Chin. Sci. Bull</addtitle><addtitle>Chinese Science Bulletin</addtitle><description>In this paper, improvements of resistive random access memory （RRAM） using doping technology are summarized and analyzed. Based on a Cu/ZrO2/Pt device, three doping technologies with Ti ions, Cu, and Cu nanocrystal, respectively, are adopted in the experiments. Compared to an undoped device, improvements focus on four points： eliminating the electroforming process, reduc- ing operation voltage, improving electrical uniformity, and increasing device yield. In addition, thermal stability of the high re- sistance state and better retention are also achieved by the doping technology. We demonstrate that doping technology is an effec- tive way of improving the electrical performance of RRAM.</description><subject>Chemistry/Food Science</subject><subject>Copper</subject><subject>Devices</subject><subject>Doping</subject><subject>Earth Sciences</subject><subject>Electroforming</subject><subject>Engineering</subject><subject>Humanities and Social Sciences</subject><subject>ions</subject><subject>Life Sciences</subject><subject>multidisciplinary</subject><subject>Nanocrystals</subject><subject>Performance enhancement</subject><subject>Physics</subject><subject>Review</subject><subject>Science</subject><subject>Science (multidisciplinary)</subject><subject>thermal stability</subject><subject>Variability</subject><subject>Voltage</subject><subject>兴奋剂</subject><subject>掺杂技术</subject><subject>电气性能</subject><subject>电铸工艺</subject><subject>电阻式</subject><subject>纳米晶体</subject><subject>记忆体</subject><subject>随机存取存储器</subject><issn>1001-6538</issn><issn>1861-9541</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>C6C</sourceid><recordid>eNp9kEtPwzAQhCMEEqXwAzgRblwCXtuJkyOqeFSqxAF64WI5zuZRJXFrp0X99zgEccSX9Uozo50vCK6B3AMh4sEBcMYjAhDxjJGInAQzSBOIspjDqf8TAlESs_Q8uHBu4zcGgs6Cz2W3tebQ9FU41Bhii3qwjVZtuEVbGtupXmNoytCia9zQHDB0X82g69HRYWfsMdy7cSnM9icFdd2b1lTHy-CsVK3Dq985D9bPTx-L12j19rJcPK4izYEPEaWJyDRqWhSFIqiLWGQpz3WeQxyXRckKzEXGWMrjHAUiJCRmmKaKUBWrnLB5cDfl-iK7PbpBdo3T2LaqR7N3EgjzZTPOhZfCJNXWOGexlFvbdMoevUiOHOXEUXqOcuQox3g6eZzX9hVauTF72_tG_5puJlOpjFSVbZxcv1MC3IMnQmTUK25_T6lNX-188t8tHGjqH2XfOQmMKQ</recordid><startdate>20120401</startdate><enddate>20120401</enddate><creator>Wang, Yan</creator><creator>Liu, Qi</creator><creator>Lü, HangBing</creator><creator>Long, ShiBing</creator><creator>Wang, Wei</creator><creator>Li, YingTao</creator><creator>Zhang, Sen</creator><creator>Lian, WenTai</creator><creator>Yang, JianHong</creator><creator>Liu, Ming</creator><general>Springer-Verlag</general><general>SP Science China Press</general><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>~WA</scope><scope>FBQ</scope><scope>C6C</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SC</scope><scope>7SP</scope><scope>7SR</scope><scope>7TB</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>FR3</scope><scope>JG9</scope><scope>JQ2</scope><scope>KR7</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope></search><sort><creationdate>20120401</creationdate><title>Improving the electrical performance of resistive switching memory using doping technology</title><author>Wang, Yan ; 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Sci. Bull</stitle><addtitle>Chinese Science Bulletin</addtitle><date>2012-04-01</date><risdate>2012</risdate><volume>57</volume><issue>11</issue><spage>1235</spage><epage>1240</epage><pages>1235-1240</pages><issn>1001-6538</issn><eissn>1861-9541</eissn><abstract>In this paper, improvements of resistive random access memory （RRAM） using doping technology are summarized and analyzed. Based on a Cu/ZrO2/Pt device, three doping technologies with Ti ions, Cu, and Cu nanocrystal, respectively, are adopted in the experiments. Compared to an undoped device, improvements focus on four points： eliminating the electroforming process, reduc- ing operation voltage, improving electrical uniformity, and increasing device yield. In addition, thermal stability of the high re- sistance state and better retention are also achieved by the doping technology. 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| subjects | Chemistry/Food Science Copper Devices Doping Earth Sciences Electroforming Engineering Humanities and Social Sciences ions Life Sciences multidisciplinary Nanocrystals Performance enhancement Physics Review Science Science (multidisciplinary) thermal stability Variability Voltage 兴奋剂 掺杂技术 电气性能 电铸工艺 电阻式 纳米晶体 记忆体 随机存取存储器 |
| title | Improving the electrical performance of resistive switching memory using doping technology |
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