Synthesis of CNT film on the surface of micro-pyramid array and its intense pulsed emission characteristics

We developed a new scheme to suppress the electric-field-screening effect in high growth density of a carbon nanotube (CNT) film during its intense pulsed emission. We synthesize the CNT film on a tridimensional surface (t-CNT film). The tridimensional surface includes wet etched silicon pyramids, and the Ni layer is electroless plated thereon. The intense pulsed emission characteristics of the t-CNT and planar-grown CNT (p-CNT) films were measured using a diode structure in single-pulse mode. The even turn-on field decreased from 5.5 V/μm for p-CNTs to 2.8 V/μm for t-CNTs, and the peak emission current increased from 232 A for p-CNTs to 324 A for t-CNTs at a peak field intensity ∼12.2 V/μm. The peak current of the t-CNT film increased by ∼39.7% over the p-CNT film. It is clear that the micro-pyramid array can effectively suppress the field screening effect to improve the electron-emission of CNT films.