Characterization of 1.8-MeV proton-irradiated AlGaN/GaN field-effect transistor structures by nanoscale depth-resolved luminescence spectroscopy
We have used depth-resolved cathodoluminescence spectroscopy to examine AlGaN/GaN modulation-doped field-effect transistors that display degraded source-drain current characteristics after 1.8-MeV proton irradiation, along with bulk heterojunction field-effect transistor material after similar proto...
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Veröffentlicht in: | IEEE transactions on nuclear science 2002-12, Vol.49 (6), p.2695-2701 |
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Hauptverfasser: | , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We have used depth-resolved cathodoluminescence spectroscopy to examine AlGaN/GaN modulation-doped field-effect transistors that display degraded source-drain current characteristics after 1.8-MeV proton irradiation, along with bulk heterojunction field-effect transistor material after similar proton irradiation. For both cases, we have observed distinct changes in spectral emission features due to decreased internal electric-field strength and new point defects within different layers of the device structure with nanometer-scale depth resolution. These changes can account for the degraded electrical characteristics. |
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ISSN: | 0018-9499 1558-1578 |
DOI: | 10.1109/TNS.2002.805427 |