Characterization of 1.8-MeV proton-irradiated AlGaN/GaN field-effect transistor structures by nanoscale depth-resolved luminescence spectroscopy

We have used depth-resolved cathodoluminescence spectroscopy to examine AlGaN/GaN modulation-doped field-effect transistors that display degraded source-drain current characteristics after 1.8-MeV proton irradiation, along with bulk heterojunction field-effect transistor material after similar proto...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on nuclear science 2002-12, Vol.49 (6), p.2695-2701
Hauptverfasser: White, B.D., Bataiev, M., Brillson, L.J., Choi, B.K., Fleetwood, D.M., Schrimpf, R.D., Pantelides, S.I., Dettmer, R.W., Schaff, W.J., Champlain, J.G., Mishra, A.K.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We have used depth-resolved cathodoluminescence spectroscopy to examine AlGaN/GaN modulation-doped field-effect transistors that display degraded source-drain current characteristics after 1.8-MeV proton irradiation, along with bulk heterojunction field-effect transistor material after similar proton irradiation. For both cases, we have observed distinct changes in spectral emission features due to decreased internal electric-field strength and new point defects within different layers of the device structure with nanometer-scale depth resolution. These changes can account for the degraded electrical characteristics.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2002.805427