N-ZnO/LaAlO sub(3)/p-Si heterojunction for visible-blind UV detection

N-ZnO/LaAlO sub(3)/p-Si heterojunction for visible-blind UV detection

A visible-blind UV photodetector (PD) using a double heterojunction of n-ZnO/LaAlO3 (LAO)/p-Si was demonstrated. Inserted LAO layers exhibit electrical insulating properties and serve as blocking layers for photoexcited electrons from p-Si to n-ZnO, leading to an enhanced rectification ratio and a v...

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Veröffentlicht in:Optics letters 2012-03, Vol.37 (6), p.1112-1114
Hauptverfasser: Tasi, D S, Kang, C F, Wang, H H, Lin, CA, Ke, J J, Chu, Y H, He, J H
Format: Artikel
Sprache:eng
Schlagworte:
Heterojunctions
Photodetectors
Potential barriers
Rectification
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Zusammenfassung:A visible-blind UV photodetector (PD) using a double heterojunction of n-ZnO/LaAlO3 (LAO)/p-Si was demonstrated. Inserted LAO layers exhibit electrical insulating properties and serve as blocking layers for photoexcited electrons from p-Si to n-ZnO, leading to an enhanced rectification ratio and a visible-blind UV detectivity of the n-ZnO/LAO/p-Si PDs due to the high potential barrier between LAO and p-Si layers ( similar to 2.0 eV). These results support the use of n-ZnO/LAO/p-Si PDs in the visible-blind UV PDs in a visible-light environment.
ISSN:0146-9592