High-Quality (211)B CdTe on (211)Si Substrates Using Metalorganic Vapor-Phase Epitaxy

High-quality (211)B CdTe buffer layers are required during Hg 1− x Cd x Te heteroepitaxy on Si substrates. In this study, direct metalorganic vapor-phase epitaxy (MOVPE) of (211)B CdTe on Si, as well as CdTe on Si using intermediate Ge and ZnTe layers, has been achieved. Tertiary butyl arsine was us...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of electronic materials 2011-08, Vol.40 (8), p.1790-1794
Hauptverfasser:	Rao, S. R., Shintri, S. S., Markunas, J. K., Jacobs, R. N., Bhat, I. B.
Format:	Artikel
Sprache:	eng
Schlagworte:	Cadmium tellurides Characterization and Evaluation of Materials Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Chemistry and Materials Science Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Density Diffraction Electronics and Microelectronics Epitaxy Exact sciences and technology Germanium Infrared radiation Instrumentation Materials Science Mercury cadmium telluride Methods of deposition of films and coatings film growth and epitaxy Molecular beam epitaxy Molecular, atomic, ion, and chemical beam epitaxy MOVPE epitaxy Optical and Electronic Materials Physics Semiconductor annealing Silicon Silicon films Solid State Physics Structure and morphology thickness Studies Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Vapor phase epitaxy growth from vapor phase
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	High-quality (211)B CdTe buffer layers are required during Hg 1− x Cd x Te heteroepitaxy on Si substrates. In this study, direct metalorganic vapor-phase epitaxy (MOVPE) of (211)B CdTe on Si, as well as CdTe on Si using intermediate Ge and ZnTe layers, has been achieved. Tertiary butyl arsine was used as a precursor to enable As surfactant action during CdTe MOVPE on Si. The grown CdTe/Si films display a best x-ray diffraction rocking-curve full-width at half-maximum of 64 arc-s and a best Everson etch pit density of 3 × 10 5 cm −2 . These values are the best reported for MOVPE-grown (211)B CdTe/Si and match state-of-the-art material grown using molecular-beam epitaxy.
ISSN:	0361-5235 1543-186X
DOI:	10.1007/s11664-011-1586-0