Si Wafer Thinning Techniques Compatible With Epitaxy of CdTe Buffer Layers

Reduction of threading dislocation density is critical for improving the performance of HgCdTe detectors on lattice-mismatched alternative substrates such as Si. CdTe buffer layers grown by molecular beam epitaxy (MBE), with thicknesses on the order of 8 μ m to 12 μ m, have helped reduce dislocation densities in HgCdTe layers. In this study, the reduction of threading dislocation densities in CdTe buffer layers grown on locally thinned Si substrates was examined. A novel Si back-thinning technique was developed that maintained an epiready front surface and achieved Si thicknesses as low as 1.9 μ m. Threading dislocation densities, acquired by defect decoration techniques, were reduced by as much as 60% for CdTe buffer layers grown on these thinned regions when compared with unthinned regions. However, this reduction is inconsistent with prior notions that threading dislocation propagation is dominated by image forces. Instead, the thickness gradient of thinned Si may play a larger role.