Microwave ECR Plasma Assisted MOCVD of Y2O3 Thin Films Using Y(tod)3 Precursor and Their Characterization

Yttrium oxide (Y2O3) thin films were deposited by microwave electron cyclotron resonance (ECR) plasma assisted metal organic chemical vapour deposition (MOCVD) process using indigenously developed metal organic precursors Yttrium 2,7,7‐trimethyl‐3,5‐octanedionates, commonly known as Y(tod)3 which were synthesized by an ultrasound method. A series of thin films were deposited by varying the oxygen flow rate from 1–9 sccm, keeping all other parameters constant. The deposited coatings were characterized by X‐ray photoelectron spectroscopy, glancing angle X‐ray diffraction and infrared spectroscopy. Thickness and roughness for the films were measured by stylus profilometry. Optical properties of the coatings were studied by the spectroscopic ellipsometry. Hardness and elastic modulus of the films were measured by nanoindentation technique. Being that microwave ECR CVD process is operating‐pressure‐sensitive, optimum oxygen activity is very essential for a fixed flow rate of precursor, in order to get a single phase cubic yttrium oxide in the films. To the best of our knowledge, this is the first effort that describes the use of Y(tod)3 precursor for deposition of Y2O3 films using plasma assisted CVD process. This paper describes the role of the oxygen ion activity in the plasma during deposition of single phase Yttrium oxide (Y2O3) thin films using a microwave ECR plasma‐assisted MOCVD process at a low substrate temperature using indigenously developed metal organic precursor Yttrium 2,7,7‐trimethyl‐3,5‐octanedionates, commonly known as Y(tod)3 which is synthesized by ultrasound method.