Inversion domain boundaries in GaN studied by X-ray microprobe

In this study, we report on the application of synchrotron spectro‐microscopic techniques to the examination of inversion domain boundaries formed intentionally in a GaN‐based lateral polarity heterostructure. Using X‐ray sub‐microbeams, no evidence of field‐driven electrodiffusion effects has been observed on spatially separated inversion domain boundaries. In addition, XANES data around the Ga K‐edge strongly supported hexagonal Ga site configurations, suggesting high local order reconstruction. Based on inner‐shell excited luminescence on the micrometer scale, the uniform spectral distribution of the radiative centers was discussed. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) This letter features the application of synchrotron spectro‐microscopic techniques to the examination of inversion domain boundaries in GaN. The authors studied intentionally formed inversion domain boundaries in a GaN lateral polarity heterostructure. Using XRF, XANES and XEOL, field‐driven electrodiffusion and impurity influences were investigated at the length scale of the x‐ray beam size.