Improvements on voltage-resistant performance of bipolar static induction transistor (BSIT) with buried gate structure

The breakdown mechanism of power bipolar static induction transistor (BSIT) with buried gate structure is analyzed in depth. A power BSIT sample with high voltage-resistant capability has been designed and fabricated in this paper. The technological methods for improving high voltage performances are represented. The active region of BSIT is surrounded with a deep trench to avoid any probable influences of various defects on device performances. Two field-limiting ring-shape junctions and one channel termination ring-shape junction are arranged around the gate region to reduce the electric field intensity. The gate-source breakdown voltage BV GS of power BSIT has been increased to 110 V from previous value of 50–60 V, and its blocking voltage is increased to 1700 V. The optimal geometrical dimensions for achieving the maximum breakdown voltage BV GS and blocking voltage V block are also represented in the paper.