Gettering in multicrystalline silicon wafers with screen-printed emitters

ABSTRACT In this paper, the gettering potential of phosphorus dopant pastes used in single‐sided screen‐printing processes is investigated including the consequences for essential solar cell parameters. These results are supported by minority carrier lifetime measurements with the quasi‐steady‐state photoconductance method and certified by the analysis of the recombination current density in solar cells on mc‐Si wafers. Copyright © 2011 John Wiley & Sons, Ltd. In this paper, the gettering potential of phosphorus dopant pastes used in single‐sided screen‐printed processes is investigated including the consequences for essential solar cell parameters. These results are supported by minority carrier lifetime measurements with quasi‐steady‐state photoconductance method and certified by the analysis of the recombination current density in solar cells on mc‐Si wafers.