Dimension-Controlled Synthesis of CdS Nanocrystals: From 0D Quantum Dots to 2D Nanoplates
The dimension‐controlled synthesis of CdS nanocrystals in the strong quantum confinement regime is reported. Zero‐, one‐, and two‐dimensional CdS nanocrystals are selectively synthesized via low‐temperature reactions using alkylamines as surface‐capping ligands. The shape of the nanocrystals is cont...
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Veröffentlicht in: | Small (Weinheim an der Bergstrasse, Germany) Germany), 2012-08, Vol.8 (15), p.2394-2402 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The dimension‐controlled synthesis of CdS nanocrystals in the strong quantum confinement regime is reported. Zero‐, one‐, and two‐dimensional CdS nanocrystals are selectively synthesized via low‐temperature reactions using alkylamines as surface‐capping ligands. The shape of the nanocrystals is controlled systematically by using different amines and reaction conditions. The 2D nanoplates have a uniform thickness as low as 1.2 nm. Furthermore, their optical absorption and emission spectra show very narrow peaks indicating extremely uniform thickness. It is demonstrated that 2D nanoplates are generated by 2D assembly of CdS magic‐sized clusters formed at the nucleation stage, and subsequent attachment of the clusters. The stability of magic‐sized clusters in amine solvent strongly influences the final shapes of the nanocrystals. The thickness of the nanoplates increases in a stepwise manner while retaining their uniformity, similar to the growth behavior of inorganic clusters. The 2D CdS nanoplates are a new type of quantum well with novel nanoscale properties in the strong quantum confinement regime.
Zero‐, one‐, and two‐dimensional CdS nanocrystals are selectively synthesized via low‐temperature reactions using alkylamines as surface‐capping ligands. The 2D nanoplates have a uniform thickness as low as 1.2 nm. 2D nanostructures are generated by the 2D assembly of magic‐sized CdS clusters formed at the nucleation stage, and subsequent attachment of the clusters. |
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ISSN: | 1613-6810 1613-6829 |
DOI: | 10.1002/smll.201200506 |