High speed silicon Mach-Zehnder modulator based on interleaved PN junctions

High speed silicon Mach-Zehnder modulator based on interleaved PN junctions

A high speed silicon Mach-Zehnder modulator is proposed based on interleaved PN junctions. This doping profile enabled both high modulation efficiency of V(π)L(π) = 1.5~2.0 V·cm and low doping-induced loss of ~10 dB/cm by applying a relatively low doping concentration of 2 × 10(17) cm(-3). High spee...

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Veröffentlicht in:Optics express 2012-07, Vol.20 (14), p.15093-15099
Hauptverfasser: Xu, Hao, Xiao, Xi, Li, Xianyao, Hu, Yingtao, Li, Zhiyong, Chu, Tao, Yu, Yude, Yu, Jinzhong
Format: Artikel
Sprache:eng
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Zusammenfassung:A high speed silicon Mach-Zehnder modulator is proposed based on interleaved PN junctions. This doping profile enabled both high modulation efficiency of V(π)L(π) = 1.5~2.0 V·cm and low doping-induced loss of ~10 dB/cm by applying a relatively low doping concentration of 2 × 10(17) cm(-3). High speed operation up to 40 Gbit/s with 7.01 dB extinction ratio was experimentally demonstrated with a short phase shifter of only 750 μm.
ISSN:1094-4087
1094-4087
DOI:10.1364/oe.20.015093