Inductively coupled plasma induced deep levels in epitaxial n-GaAs

Inductively coupled plasma induced deep levels in epitaxial n-GaAs

The electronic properties of defects introduced by low energy inductively coupled Ar plasma etching of n-type (Si doped) GaAs were investigated by deep level transient spectroscopy (DLTS) and Laplace DLTS. Several prominent electron traps (Ec—0.046eV, Ec—0.186eV, Ec—0.314eV. Ec—0.528eV and Ec—0.605e...

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Veröffentlicht in:Physica. B, Condensed matter Condensed matter, 2012-05, Vol.407 (10), p.1497-1500
Hauptverfasser: Auret, F.D., Janse van Rensburg, P.J., Meyer, W.E., Coelho, S.M.M., Kolkovsky, Vl, Botha, J.R., Nyamhere, C., Venter, A.
Format: Artikel
Sprache:eng
Schlagworte:
Activation energy
Condensed matter
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Deep level transient spectroscopy (DLTS)
Defects
Electron states
Epitaxy
Exact sciences and technology
GaAs
Gallium arsenide
Gallium arsenides
Iii-v semiconductors
Impurity and defect levels
Inductively coupled Ar plasma etching (ICP)
Inductively coupled plasma
Metastability
Physics
Signatures
Silicon
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Zusammenfassung:The electronic properties of defects introduced by low energy inductively coupled Ar plasma etching of n-type (Si doped) GaAs were investigated by deep level transient spectroscopy (DLTS) and Laplace DLTS. Several prominent electron traps (Ec—0.046eV, Ec—0.186eV, Ec—0.314eV. Ec—0.528eV and Ec—0.605eV) were detected. The metastable defect Ec—0.046eV having a trap signature similar to E1 is observed for the first time. Ec—0.314eV and Ec—0.605eV are metastable and appear to be similar to the M3 and M4 defects present in dc H-plasma exposed GaAs.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2011.09.070