Near-infrared electroluminescence in ErYb silicate based light-emitting device

► ErYb silicate based metal–insulator–semiconductor device was studied. ► Near-infrared electroluminescence was obtained in ErYb silicate. ► The Er ions were directly impact excited by hot electrons in the ErYb silicate. We report the first observation of near-infrared electroluminescence (EL) in ErYb silicate based metal–insulator–semiconductor (MIS) light-emitting device. The ErYb silicate thin film and the device were fabricated on silicon substrate using the standard silicon technology. The EL spectrum at 1.53μm was observed under a current density of 1.2mA/cm2. The conduction mechanism of the device was Fowler–Nordheim tunneling and the EL mechanism was attributed to the direct impact excitation of Er ions by the hot electrons produced by the high electric field in the silicate layer.