Formation and transformation of ZnTiO3 prepared by sputtering process

Zinc titanate (ZnTiO3) films were prepared using RF magnetron sputtering at substrate temperatures ranging from 30 to 400AC. Subsequent annealing of the as-deposited films was performed at temperatures ranging from 600 to 900AC. It was found that all as-deposited films were amorphous, as confirmed b...

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Veröffentlicht in:Thin solid films 2010-10, Vol.518 (24), p.7366-7371
Hauptverfasser: Lee, Ying-Chieh, Huang, Yen-Lin, Lee, Wen-His, Shieu, Fuh-Sheng
Format: Artikel
Sprache:eng
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Zusammenfassung:Zinc titanate (ZnTiO3) films were prepared using RF magnetron sputtering at substrate temperatures ranging from 30 to 400AC. Subsequent annealing of the as-deposited films was performed at temperatures ranging from 600 to 900AC. It was found that all as-deposited films were amorphous, as confirmed by XRD. This was further confirmed by the onset of crystallization that took place at annealing temperatures 600AC. The phase transformation for the as-deposited films and annealed films were investigated in this study. The results revealed that pure ZnTiO3 (hexagonal phase) can exist, and was obtained at temperatures between 700 and 800AC. However, it was found that decomposition from hexagonal ZnTiO3 to cubic Zn2TiO4 and rutile TiO2 took place with a further increase in temperature to 900AC.
ISSN:0040-6090
DOI:10.1016/j.tsf.2010.05.005